SANTA CLARA, Calif. -- Integrated Device Technology Inc. here today extended its Bank-Switchable dual-port SRAM series to 9-megabit memory devices with 166-MHz performance per port. The new 36-bit dual-port SRAM is aimed at high-bandwidth applications in routers, switches, and wireless base stations used in third-generation cellular phone applications.
Unlike conventional dual-port memories, IDT's architecture does not require extra transistors in SRAM cells to support additional row and bit lines. The Bank-Switchable memories use a multiplexing architecture that subdivides the array into banks for multi-port operation. The SRAMs support simultaneous access and independent clock rates up to 166 MHz.
The 9-Mbit is pin compatible with IDT's other 36-bit Bank-Switchable devices, which range from 2-Mbit to the new 9-Mbit chips. The memories operate on 3.3 volts but also support 2.5-V operation.
"This allows system designers to bridge the gap between the 3.3-volt components and the newer network processors at 2.5-V output I/O requirements," said Bill Dean, strategic marketing manager for multi-port products at IDT. "The 36-bit dual ports support simultaneous access to the memory array at 166 MHz, which amounts to 12-gigabit-per-second of data moving in and out of the device. This makes it suitable for high-bandwidth application--such as routers, switches and 3-G base stations--which must buffer the data between ASICs and FPGAs or DSPs and other processors."
The new 9-Mbit devices are now sampling in 208-contact fine-pitch ball-grid array (fpBGA) The IDT70V7519 in a 256-Kbit-by-36 configuration is priced at $118.74 each in a 133-MHz version in 10,000-piece quantities. The chip is fabricated with IDT's 0.18-micron technology.