Korean chipmaker Samsung Electronics Co. said Friday that it will invest $500 million over the next three years to upgrade its Austin, Texas, fab to 90nm processing and expand capacity to 45,000 wafers a month by 2005.
The Austin fab earlier this year started transitioning to 0.12-micron processing from 0.14 micron, and in 2004 will move to 0.1 micron before reaching 90nm in 2005.
The fab currently makes predominately 256Mbit DDR SDRAMs and supplies about 10% of all Samsung DDR memory chips, said Bill Cryer, executive counsel for Samsung Austin Semiconductor. The Samsung roadmap calls for the fab to produce 1Gbit SDRAMs by around 2005.
Cryer said the fab will remain a 200mm wafer facility. "There are no plans to build a 300mm wafer fab in Austin. Samsung already has one 300mm DRAM fab in operation in Korea and is building a second 300mm fab, also in Korea," he said.
The Austin fab has been open since 1997, at an initial investment of $1.3 billion. It is Samsung's only fab outside Korea.