TAIPEI, Taiwan United Microelectronics Corp. said Thursday (June 12) that it had completed a test circuit using strained silicon technology developed with AmberWave Systems, a specialist in the technology.
In a video presentation at the 2003 VLSI symposium in Kyoto, Japan, the company said a 70nm strained silicon transistor yielded a speed enhancement of over 10 percent on a test circuit.
In a statement, Sun Shih-wei, vice president of UMC's Central Research and Development Division, said, "UMC's strained silicon process offers an alternative path to realize performance improvements without aggressive gate length shrinkage. We believe that many of our foundry partners will benefit from this enabling technology in the future. We are also working with AmberWave to enhance p-channel transistor performance, improve strained layer defect density, and decrease substrate-costs associated with this strained silicon technology. "
"AmberWave is seeing the interest in strained silicon accelerate significantly as companies look for ways to address the transistor performance challenges associated with deep submicron technology." said Mitch Tyson, AmberWave's CEO.