SCHWALBACH, Germany Samsung Electronics Co. Ltd. has developed a chemical vapor deposition (CVD) method for depositing aluminum interconnect in DRAMs using a 70-nm manufacturing process, the company said Thursday (May 27).
The company also said it expects to unveil "70-nm class" DRAMs before the end of 2004.
Existing DRAM circuit-wiring processes have employed a physical vapor deposition (PVD) method in which thin films are formed by sputtering a metal target. Due to the difficulty of forming voids, PVD has been problematic at the 90-nm manufacturing node and is not expected to scale, Samsung said.
Using CVD, not only is the problem of cavitations addressed, but the electrical properties of the wiring are improved. Samsung also claimed aluminum CVD is "an essential process technology in manufacturing 70-nanometer DRAMs."
It could also reduce wiring-related manufacturing costs by about 20 percent since the process does not require planarization and cleaning process which are required with PVD.
Samsung said it has applied the aluminum CVD process to 90-nm, 512-Mbit DRAM samples and plans to unveil 70-nm DRAMs employing th4 process technology by the end of the year.