TAOYUAN, Taiwan Inotera Memories Inc., the DRAM joint venture formed between Infineon Technologies AG and Nanya Technology Corp. in 2002, opened its 300-mm wafer fab Wednesday (June 30).
The first DRAMs made using Infineon's 110-nm trench technology are rolling off the production line, located at HwaYa Technology Park. When fully operational, the fab will produce 50,000 wafer starts per month, Infineon said.
Construction and ramp up to production took just 18 months, said Charles Kau, president of Inotera Memories.
"Inotera Memories is one of the most important investments for Infineon in Asia, and demonstrates the company's commitment to its Asian partnership strategy," said Karlheinz Horninger, executive vice president of Inotera Memories.
Inotera will be integrated into Infineon's international network of DRAM production sites, which includes the 300-mm manufacturing sites in Dresden, Germany, and Richmond, Va.
Cooperation on standard memory chips between Infineon and Nanya began in November 2002. Along with the 50-50 joint venture, both companies are jointly developing 90- and 70-nm trench technologies.
The Inotera 300-mm facility will be equipped in two stages. The first was ramping DRAM production that started in April. A capacity of more than 20,000 wafer starts per month is planned by the end of 2004. Initial production of memory products is based on the 110-nm manufacturing process with a transition to 90-nm expected to start in 2005.
Completion of the second stage of investment is expected by the end of 2005. Total capacity would then increase to more than 50,000 wafer starts per month, making Inotera the world's largest DRAM production facility.
Total investment in the Inotera joint venture amounts to around $2.2 billion. Currently, the company employs 1,100 workers. With the completion of the second stage, an additional 500 employees will be added.