SAN JOSE, Calif. Freescale Semiconductor Inc. and the University of Florida claim that they have created the world's first double-gate transistor model.
The double-gate transistor is also called a FinFET, which could pack more computing power into less space and reduce power consumption, according to Freescale (Austin, Texas).
"Double-gate transistors are becoming a serious candidate for the 45-nm technology node," said Freescale's chief technology officer, Claudine Simson, in a statement. "The software model developed with the University of Florida moves it one step closer to commercialization." requirements."
Freescale is driving licensing of the University of Florida's double-gate models. "Freescale's license to third parties allows circuit designers to get an early look into the new double-gate devices and enable the creation of novel circuits using these models," said Simson.