MANHASSET, N.Y. Japan-based Fujitsu Ltd. and Seiko Epson announced Wednesday (June 15) they would jointly develop next-generation technology for Ferroelectric Random Access Memory (FRAM) non-volatile memory.
According to the agreement, the two companies plan to develop a highly integrated next-generation FRAM that is one-sixth the cell area of conventional FRAMs, slated for the first half of 2006. Fujitsu and Epson also plan to develop memory core process technology that features minimal constraints on the number of read/write cycles that can be executed.
Under the joint development agreement, both companies plan to combine their elemental technologies, such as for FRAM materials and miniaturization processes, to speed development time. Fujitsu and Seiko hope to meet increasing market demand for FRAM non-volatile memory to fulfill needs for low power consumption and high read/write speeds.