LONDON Japanese DRAM maker Elpida Memory Inc. has developed a 2-Gbit DDR2 synchronous DRAM, the first device to use a 80-nanometer manufacturing process, and the industry's highest capacity DRAM.
Elpida's 2-Gbit SDRAM at 80-nm has the same operating current as a 1-Gbit DDR2 SDRAM device, the company said. The 2-Gbit device is packaged in 68-ball FBGA packages that can be stacked and mounted on a JEDEC-standard, 30-mm height, registered dual in-line memory module (DIMM) or on a fully-buffered DIMM (FB-DIMM) at 30.35-mm height.
Elpida intends to create 4-Gbyte and 8-Gbyte capacity DDR2 modules intended for high-end computers, using the devices. Volume production is expected to begin by the end of the current fiscal year. The company said pricing would be set at that time.