LONDON German chip maker Infineon Technologies AG has said that an improved SiGe:C (silicon-germanium carbon) manufacturing process is the basis for its latest generation of heterojunction bipolar transistors (HBTs). Infineon (Munich, Germany) has introduced a family of HBTs, the BFP740 family, that it claims offers performance that previously required gallium arsenide.
Infineon’s silicon-germanium carbon process technology includes a reduced base resistance, leading to low noise figures for silicon- based discrete transistors, Infineon claimed. In addition the company has developed a method to reduce parasitic ground inductance, permitting high-gain values at higher frequencies in plastic packages.
The SiGe:C transistors are suitable for use at 10-GHz frequencies in applications such as low noise amplifiers (LNAs), microwave oscillators, and general-purpose amplifiers.
The new BFP740 RF transistors have a typical transition frequency of 42-GHz and provide noise figure levels of 0.5-dB at 1.8-GHz and 0.75-dB at 6-GHz, respectively. The typical maximum stable power gain is 28-dB at 1.8-GHz and the typical maximum available power gain is 19-dB at 6-GHz, Infineon said.