MANHASSET, N.Y. Cree Inc. has been awarded a $15 million contract to advance silicon carbide (SiC) microwave technology by the Dept. of Defense's Title III Program, administered by the Air Force Research Laboratory (AFRL.)
Under the five-year contract, Cree will focus on advancing silicon carbide (SiC) microwave monolithic integrated circuit (MMIC) processing techniques to transition the production of SiC MMICs to 100 mm (4-inch) substrates and reduce cost per chip.
The MMICs can significantly enhance the information gathering capabilities of next-generation military radar systems. Cree is contributing an additional $4.7 million to the program for total
project funding of $19.7 million.
"By increasing yields and moving to larger wafer formats, Cree is leading the effort to significantly reduce production costs of SiC MMICs for military applications as well as discrete SiC MESFETs for commercial applications such as WiMax," said John W. Palmour, Cree's executive vice president of Advanced
Devices, in a statement.
The contract will build upon Cree's work on 100-mm high purity semi insulating SiC substrates for the Defense
Advanced Research Projects Agency's Wide Bandgap Semiconductor Technology Initiative.