LONDON Intrinsic Semiconductor has started production of initial lots of 100-mm SiC substrates and plans to migrate production of all its products SiC wafers of both insulating and conducting types, SiC and gallium nitride (GaN) epitaxial products in 75-mm diameter to the new process.
Intrinsic (Dulles, VA.) also said it has developed silicon carbide substrates completely free of micropipe defects.
Such defects voids that permeate SiC material as it is grown have been a major contributor to SiC's low yields and associated high costs. Intrinsic says it managed to make the micropipe-free substrates using its commercial production equipment. It suggests this represents a major milestone towards SiC's commercialization.
"More than just a yield improvement, micropipe-free substrates introduce a new category of product, opening up new device possibilities," notes Cengiz Balkas, Intrinsic’s president and CEO. "Large-area devices that switch 100 amps or more, for example, cannot be manufactured cost-effectively even with defect densities as low as 1 micropipe per square centimetre,” added Balkas.
The transition to 100-mm production from current 50-mm and 75-mm substrates is also said to be an important aspect of commercialization of SiC devices.
"The conversion of our manufacturing to 100-mm substrates, which will be available in volume in the first half of 2006, will provide a major stimulus to commercial SiC device production aimed at satisfying demand in the rapidly expanding power and RF market," Balkas said in a statement.