TOKYO Renesas Technology Corp. has licensed its capacitorless twin transistor RAM (TTRAM) technology to Ottawa-based Emerging Memory Technologies Inc., which develops embedded memory intellectual property.
Through the agreement, Renesas expects to be a pioneer in capacitorless memory technologies that integrate a dynamic RAM with system-on chip LSIs on silicon-on-insulator (SOI) wafers. Renesas presented the TTRAM technology at the 2005 IEEE Custom Integrated Circuit Conference (CICC) last September.
Renesas' TTRAM technology features two serially connected transistors, eliminating the need for a metal-insulator-metal capacitor implemented in conventional memory cells. Its memory cell structure is scalable in 65nm and in finer process technologies.
Rivals Innovative Silicon and Toshiba have also announced similar technologies using a floating body to eliminate a capacitor in a memory cell for an SOI process.
Renesas does not have an SOI process line. By involving IP venders and foundries in this technology, the company expects to use third parties for device production.
"Customers require high-density memory solutions without compromising design trade-offs in area, performance and power," said Kazutami Arimoto, deputy general manager of system core technology division at Renesas Technology Corp. in a statement. "After licensing the TTRAM technology based memory IP from EMT, embedded memory users will soon be able to benefit from the high-density, cost-effective solutions that were previously only available in bulk CMOS."