SEOUL, South Korea South Korean memory chip maker Hynix Semiconductor Inc. said it has launched a new 300-mm research and development fab line, named R3.
The R3 fab line, built on a 28,000-square-meter land site in Icheon, South Korea, will enable Hynix to speed up R&D for new chips including DRAMs based on sub-50-nm processing technology and NAND flash memories, the company said.
Hynix completed test operations and safety checks for the R3 fab line in August. The R&D fab line will start prototype production in October, according to the company.
Hynix is also expanding in the United States as well. Recently, Oregon Governor Ted Kulongoski praised Hynix' expected decision to invest $250 million in the company's fab in the state.