PORTLAND, Ore. FEI Co. (Hillsboro, Ore.) will unveil a family of transmission electron microscopes (TEM) next week that it says will enable atomic-scale imaging and analysis of semiconductor wafers.
FEI's Helios NanoLab 400S wil be showcased at Semicon Japan (Dec. 6-8, 2006, Chiba, Japan). The Helios NanoLab is a family of dual-beam TEMs.
A focused ion beam on the NanoLab can cut tiny slivers out of wafers without destroying adjacent chips. The the sliver can then be analyzed by the scanning electron beam, enabling layers of a semiconductor wafer to be imaged as a cross-section.
FEI claims the TEM improves imaging resolution by 40 percent over previous models.
Low-voltage scanning electron microscope resolution has also been improved, the company claims, for cross-sectional imaging, thereby enabling semiconductor materials at sub-65-nanometer design nodes to be more easily analyzed.