SAN JOSE, Calif. Applied Materials Inc. here claimed two new breakthroughs in the patterning arena for chip designs. The chip-equipment giant rolled out a self-aligned double patterning technology as well as a hardmask system.
The self-aligned double patterning technology enables 32-nm lines and spaces on a 193-nm ''dry'' scanner, said Farhad Moghadam, senior vice president and general manager of Applied Materials' Thin Films Group.
The techology is based on the Applied Producer APF (Advanced Patterning Film) PECVD (Plasma-Enhanced Chemical Vapor Deposition) system.
The Applied Endura Metal Hardmask system with new Versa TTN PVD technology is to deliver an advanced TiN1 hardmask film for patterning copper/low k interconnects and high aspect ratio contact structures.
An integral component of a leading-edge patterning stack, this metal hardmask film enables superior CD and profile control while preserving the k-value of ultra-low k dielectric materials for increased chip speed and yield.
The system is designed for high volume manufacturing at the 45- and 32-nm nodes and provides a throughput of up to 85 wafers per hour, with 50 percent lower cost of consumables than competitive systems.