SAN JOSE, Calif. Is nano-imprint lithography for real or a mere R&D tool? Molecular Imprints Inc. (MII) claims that Toshiba Corp. has ''validated'' the use of its nano-imprint lithography technology in developing 22-nm CMOS devices.
Toshiba fabricated narrow trench features at dimensions down to 18-nm using MII's Imprio 250 system, according to the Austin, Texas-based supplier of nano-imprint lithography tools.
It's unclear if Toshiba will put nano-imprint tools into its production fabs at 22-nm and beyond. At this node, Toshiba is also exploring other lithography technologies, such as 193-nm immersion and extreme ultraviolet (EUV).
MII took a shot at EUV. ''Unlike extreme ultraviolet lithography, our technology builds on the existing optical lithography infrastructure -- helping to make it ideally suited for the economic production of very-high-density CMOS devices,'' said Mark Melliar-Smith, CEO of MII, in a statement.
''We believe our advanced S-FIL technology is a viable solution for critical device layer applications at the 32-nm node, and a superior solution at and beyond the 22-nm node," he said. S-FIL is MII's nano-imprint technology.
MII and Toshiba have been working together for some time. The findings in the work were disclosed in a paper entitled, "Nanoimprint Applications Toward 22-nm Node CMOS Devices." The paper was presented at the 33rd International Conference on Micro- and Nano-Engineering (MNE) in Copenhagen, Denmark.
''Toshiba leveraged MII's Imprio 250 system to pattern 18-nm isolated features and 24-nm dense features with <1-nm critical dimension uniformity and <2-nm line edge roughness (LER),'' according to MII's paper.
''Defectivity levels of as low as <0.3 defects per cm squared were achieved, which are approaching those of immersion lithography,'' according to MII. ''Device overlay results were also within Toshiba's required specifications.''