SAN JOSE, Calif. -- Micron Technology Inc. has begun sampling its new 1-Gbit DDR2 device, based on a 68-nm DRAM process technology.
The new process, coupled with Micron's 6F2 technology, has enabled a 1-Gbit DDR2 device with a die size of just 56-mm2. The 68-nm process provides approximately 20 percent lower power consumption when compared to previous process generations.
This new advanced memory technology will be targeted at server, mobile and other computing applications, where the benefits of reduced die size, faster speeds and lower power consumption are most critical.
Mass production is expected to begin early next year, with DDR3 and other low-power DRAM products expected to follow in the second half of the year.