SAN JOSE, Calif. -- Hoping to solve a major problem in photoresist technology, IBM Corp. and Rohm and Haas Co.'s Electronic Materials unit have entered into a joint development agreement to devise new anti-reflective materials for the 32-nm node and beyond.
The companies plan to devise a new class of 248- and 193-nm wavelength materials, including bottom anti-reflective coatings (BARCs) and top anti-reflective coatings (TARCs).
''We are not developing new resists, but focusing on BARCs and TARCs,'' according to a spokesman for Rohm and Haas. ''We are not solely focusing on 248-nm. We are focusing on anti-reflective materials for implant layers in IC designs with 193- and 248-nm wavelengths."
Work on the joint collaboration will take place at IBM's East Fishkill, Yorktown and Albany facilities, as well as Rohm and Haas' Advanced Technology Center in Marlborough, Mass.
In this arena, the challenge is to control the overall reflectivity of the material, said James Fahey, president of Microelectronic Technologies for Rohm and Haas Electronic Materials.
As a result, the industry requires "new materials to control reflectivity," said Rao Varanasi, senior staff manager and manager of R&D lithographic materials.
"Partnering with IBM will accelerate the development of new materials and ensure that we are on track to meet the needs for 32- and 22-nm nodes," Fahey added.