SAN JOSE, Calif. -- Toshiba Corp. and IBM Corp. have co-developed a high-performance CMOS field effect transistor (FET)--an event that could propel a new class of devices.
To enable the FET, the companies made use of a technology called direct silicon bonding (DSB). DSB ''fabricates substrates by attaching a layer of
silicon with a different crystal orientation onto a base substrate, thus changing the wafer's electrical chacteristics,'' according to Toshiba and IBM.
DSB can achieve a 30 percent performance boost for CMOS--as high-k dielectrics and metal gates--but is simpler to implement, according to Toshiba and IBM.
CMOS makes use of two types of transistors: positively-charged FETs (PFETs) and negatively charged FETs (NFETs). Toshiba and IBM achieved the FET using new hybrid-orientation technology fabricated on a hybrid substrate with different crystal orientations to ''achieve significant PFET performance improvement without any deterioration in NFET performance.''
The companies described their process at this week's Symposium on VLSI Technology in Hawaii.