Also at the IEDM, Tohoku University will discuss a novel way to use magnetic tunnel junctions (MJTs) for data storage in a high-density 3D processor architecture.
The researchers used them to construct a type of memory called a SPRAM (spin-transfer torque RAM). ''Then, they used the SPRAMs to drive reconfigurable 3D logic blocks fabricated with a standard 0.14-micron CMOS process,'' according to the paper.
''Experimental results showed that the reconfigurable logic blocks achieved a 25-MHz readout speed and relatively low levels of magnetic resistance,'' according to the paper.
The 54th annual IEDM is Dec. 15-17 at the Hilton San Francisco. The conference will be preceded by a day of short courses on Sunday, Dec. 14.