SANTA CLARA, Calif. -- Another memory startup with roots in Australia has emerged in the marketplace.
The startup, called Qs Semiconductor Corp., came out of stealth mode on Wednesday (June 24) and said that it is developing a nonvolatile memory, based a carbon-silicon or silicon carbide (SiC) on silicon substrate technology.
The four-year-old startup is devising a 64-kilobit device, with eventual plans to produce a 1-gigabit product at the 65-nm node. The company is also in talks to develop its technology at SVTC Technologies Inc., an R&D foundry vendor.
''We're focused on storage-class memories and the hand-held market,'' said Bob Goodman, a semiconductor veteran who is president and chief executive of Qs Semiconductor (Sunnyvale, Calif.).
The wide band-gap characteristics of SIC-on-silicon technology enables ''fast read and write times'' and ''no wear out'' capabilities for its proposed devices. ''We're simply trapping a charge in SiC,'' Goodman said. "SiC is great for that.''
The company claims that it can devise and scale its technology using standard LPCVD equipment. ''It's in-situ doping of carbon,'' he told EE Times at the Web-Feet Nonvolatile Memory Conference here. ''It's a p-n-p stack.''