SAN FRANCISCOMicron Technology Inc. Tuesday (June 30) announced mass production of NAND flash memory chips using 34-nanometer (nm) process technology. Micron also said its subsidiary, Lexar Media Inc., would deliver flash memory cards and USB flash drives based on the 34-nm devices.
Micron (Boise, Idaho) said its 32-gigabit (Gb) multi-level cell (MLC) NAND chip is 17 percent smaller than its first-generation 32Gb chip. The company's 16Gb MLC NAND chip provides a small package at 84mm[sup][/sup], Micron said.
Micron said it is also sampling 8- and 16Gb single-level cell (SLC) NAND chips using the 34-nm process.
The new products feature an ONFI 2.1 synchronous interface that delivers transfer speeds of up to 200 megabytes per second, Micron said.
Micron and manufacturing partner Intel Corp. recently rolled out a 34-nm NAND part through the companies' joint NAND venture, IM Flash Technologies LLC. Micron is readying a 2x-nm NAND device which the company plans to start sampling in the fourth quarter.
Despite the downturn and lingering NAND overcapacity, the NAND flash memory scaling race appears to be off and running once again.
Earlier this year, partners SanDisk Corp. and Toshiba Corp. took the scaling lead, rolling out a 32-nm device.
Lexar will use the 34-nm devices in high-performance memory cards, including the new Lexar Platinum II 32GB Secure Digital High Capacity (SDHC) memory card and the Lexar 16GB microSDHC mobile memory card, the company said.
By the end of September, Micron's 34-nm NAND will also be used in Lexar microSD and microSDHC cards, Memory Stick Micro (M2) cards, and various capacities of Secure Digital, SDHC, CompactFlash, and Memory Stick PRO Duo cards, the company said.
The 34-nm NAND devices will also be used in Lexar's JumpDrive USB flash drives, including JumpDrive Retrax, JumpDrive TwistTurn, JumpDrive FireFly and JumpDrive Secure II Plus, the company said.