SAN FRANCISCO -- In a major milestone, Cymer Inc. said that it has shipped a laser-produced plasma (LPP) extreme ultraviolet (EUV) lithography source to ASML Holding NV.
Cymer (San Diego) also claims it has achieved 75 watts of EUV lithography exposure power (full die exposure) and expects to scale to 100 watts exposure power within the current quarter, enabling scanner throughput of 60 silicon wafers (300-mm) per hour. This is required for volume manufacturing with ASML's EUV technology.
Cymer's EUV source, the first of a multi-unit purchase agreement between the two companies, is currently being installed at ASML's headquarters in the Netherlands, where it will support integration and testing of next-generation EUV lithography scanners.
ASML has received orders for five EUV lithographic systems from memory and logic customers, with deliveries starting in 2010.
In an LPP EUV source, microscopic droplets of molten tin are fired through a vacuum chamber and individually tracked and vaporized by a pulsed high power infrared laser--as frequently as 50,000 times per second--creating a high temperature tin plasma point source which radiates 13.5 nm wavelength light.
A large EUV mirror collects and directs this light into the scanner where it is patterned by a photomask and projected using a complex set of image reduction mirrors onto a light-sensitive silicon wafer--transferring the pattern onto the wafer.