PARIS The Electronics and Information Technology Laboratory of the CEA (CEA-Leti) of France claimed that its planar SOI technology meets requirements for low-power 22-nm node devices.
Leti (Grenoble, France) said it has demonstrated that planar SOI is superior to other technologies based on bulk CMOS technology and FinFET architecture. It also highlighted the performances for low-power applications requiring 22-nm technology, such as consumer electronic devices including 4G mobile phones.
Moreover, Leti claimed it has demonstrated drain-induced barrier lowering (DIBL) below 100mV/V, and SOI has been proven to enable the reduction of electrostatic parasitics.
"Many transistor architectures have been proposed for the 22nm node and below. At Leti, we favored planar technologies for faster and easier transition to manufacturing," commented Laurent Malier, CEO of Leti.
Leti's recent achievements pave the way for the development of green products, said Malier. He declared: "Our recent results prove the strength of this approach. Together with the recent ARM results demonstrating power reduction on 45nm technology, we have proven that SOI technologies offer solutions for low power at a wide variety of nodes, including 22nm and below. Furthermore, we have demonstrated that planar SOI dramatically improves the energy performances of many products that will change our lives, while offering long-term success for many companies involved in these fast-growing markets."
Aware of the variability challenge that needs to be tackled at the 22-nm node, Leti said it has demonstrated that variability control is possible with today's state-of-the-art SOI wafers. Variability on threshold voltage was notably reduced by a factor of two compared with FinFET technologies, at wafer and batch levels.
Finally, Leti noted that fully depleted SOI (FDSOI) CMOS can be scaled down to the 10nm node through tuning the buried oxide and silicon layer thickness. Displayed results show that FDSOI approach also addresses the variability issues for this further shrink.