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Lithography's generation gap

4/5/2010 04:00 AM EDT
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resistion
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re: Lithography's generation gap
resistion   4/5/2010 2:56:10 PM
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I found it interesting, that at Intel's 11 nm, they would mix both 193i and an NGL like EUV or maskless, when any of these alone would already pose a lot of cost and complexity. I think a large part of the reason is there are so few nodes left below 20 nm, before other issues (like gate to diffusion contact leakage) begin to dominate the picture.

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