TSMC is currently shipping its 40-nm process. Then, it will move to the 28-nm node.
''The first node we're going to release for the 28-nanometer will be we call the 28 LP (low-power). This is our poly gate and silicon oxide nitrate version. We will establish production at the end of June this year,'' Chiang said in a recent presentation.
''The first high-k metal gate we call 28 HP for the high performance application will be introduce the end of September this year, and followed by three months later December will be the 28 HPL. This is the first high-k metal gate introduction for the low power application,'' he said.
TSMC's high-performance 20-nm process is slated to move into risk production in the third quarter of 2012, with volume production scheduled for the first quarter of 2013. Two quarters after the high-performance technology, TSMC is slated to roll out its low-power process.