SAN JOSE, Calif. -- Racing against nonvolatile memory maker Numonyx BV, Samsung Electronics Co. Ltd. claims that it will ship the industry's first multi-chip package (MCP) with phase-change RAM (PRAM) for use in mobile handsets beginning later this quarter.
The 512-megabit MCP from Samsung is compatible with 40-nm-class NOR flash memory. PRAM is expected to be embraced by next year as the successor to NOR flash in consumer electronics designs, said Dong-soo Jun, executive vice president of memory sales and marketing for Samsung Electronics.
"Our PRAM MCP will not only enable handset designers to utilize conventional platforms, but expedite the introduction of LPDDR2 DRAM and next-generation PRAM technology as the leading-edge basis for high-performance solutions," he said.
PRAM, which stores data via the phase change characteristics of its base material, an alloy of germanium, antimony and titanium, provides three-times faster data storage performance per word than NOR chips.
Numonyx, Samsung and others are racing each other to ship products based on phase-change memory. Numonyx, which is being acquired by Micron Technology Inc., recently announced the Omneo range of NOR-compatible phase-change memories.
The products are 128-Mbit capacity devices made using a 90-nm process technology that offer up to "300 times faster write speeds and ten times more write endurance than today's flash memory," the company said in a statement.
Numonyx has yet to sample customers with a long-awaited 1-Gbit capacity phase-change memory. The indications from Numonyx are that samples will be available in 2010 with volume production expected in 2011.