SEOUL, Korea Hynix Semiconductor Inc. today (March 7, 2003) rolled out samples of its first commercial ferroelectric RAMs (FeRAMs) for use in mobile and related applications.
The move puts the South Korean memory giant in a potentially huge market. The company expects rapid market penetration of FeRAMs in handsets, PDAs, and smart cards. In total, the worldwide market for FeRAMs is expected to reach $10 billion by 2006, according to Seoul-based company.
Introduced in 4- and 8-megabit densities and manufactured in Hynix's 0.25-micron process technology, the 3-Volt FeRAMs have 90-ns data access times and are capable of 100 billion read/write repetitions.
Capable of expanding to 64-Mbit densities, Hynix' FeRAM architecture consists of one transistor and capacitor cell structure. By applying new circuit concepts and ferroelectric materials such as bismuth lanthanum titanate, Hynix claims to have improved the stability and reliability of the device.
Hynix has applied for more than 150 U.S. patents for FeRAM technologies. It will present the details of its FeRAM technical features at the 15th International Symposium on Integrated Ferroelectrics Conference being held in Colorado Springs, Colo., on March 10.