TSMC delays 0.18-micron SiGe process
Don't look now, but Taiwan Semiconductor Manufacturing Co. Ltd. has reportedly delayed the introduction of its 0.18-micron, silicon-germanium (SiGe) process technology by about six months.
The silicon foundry giant was originally supposed to offer the 0.18-micron SiGe technology by the end of last year, according to the company's roadmap (see April 10, 2002 story ). But according to TSMC's new roadmap, the company will not begin "risk production" for this technology until mid-2003.
TSMC's 0.18-micron SiGe technology, dubbed SG018, is SiGe BiCMOS process, with a performance rating of 35/65/120-GHz Ft and a 60/90/120-GHz Fmax, according to TSMC. The 1.8- and 3.3-volt technology is six-layer-metal offering with a 3-micron inductor thickness.
The Hsinchu-based company is not totally down and out in SiGe. It is currently offering SiGe, based on 0.35-micron technology. Both the 0.35- and 0.18-micron SiGe technologies were licensed from Conexant Systems Inc. of Newport Beach, Calif.