SAN JOSE -- Fujitsu Microelectronics America Inc. here launched a new 0.11-micron CMOS standard cell ASIC series, which targets advanced networking and low-power consuming wireless systems served by competing SiGe and GaAs chip technologies.
"With this versatile new series we are focusing on the fastest-growing network and communications applications such as wide, metro and local area network systems and wireless products," said Keith Horn, vice president of marketing at Fujitsu Microelectronics America. "Our CMOS process has now achieved speeds typical of more expensive silicon-germanium SiGe or gallium-arsenide GaAs technologies, and we expect to exceed 10-Gigabits/second speeds in the not-too-distant future."
Based on 0.11-micron (drawn) processes, the new CS91 series of design cells features input/output performance options ranging from 622-megabits-per-second to 3.125-gigabits-per-second operating at 0.8-to-3.6 voltage interface levels, said the U.S. subsidiary of Japan's Fujitsu Ltd. Cores circuits run at 0.8-to-1.3 volts.
The new ASIC standard cell series is designed for high-end networking systems, based on 10-Gigabit Ethernet, OC-192 or OC-768 standards, Fujitsu said. The standard cells also include functions for set-top boxes, storage, gateway and similar network access systems, as well as for cellular handsets, PDAs, and other mobile and handheld devices, according to the company.
Fujitsu said the design library includes a full suite of controller cores, including ARM Cache, FCRAM, SDRAM DDR and an 8-channel DMA controller, UART and interrupt controller. For wireless designs, Bluetooth and a range of IEEE 802.11 cores will also be available. Mixed-signal and analog macros will also be included.
"We continue to add IPs intellectual properties constantly, so our customers will have as many performance, speed, power and function options as possible," Horn said.
Fujitsu will offer several packaging options, including: flip-chip BGA packages (ceramic or organic substrate) with ball counts from 450 to 2,116 contacts; enhanced and TAB ball-grid arrays; fine-pitch FBGAs; facedown head spreader BGAs; and high-density QFPs.