SAN DIEGO--JMAR Technologies Inc. today said it was on schedule with plans to demonstrate an integrated compact X-ray source with a newly-developed X-ray stepper for gallium-arsenide (GaAs) processes using lithography feature sizes below 130 nm (0.13 micron) and 150-mm (6-inch) substrates.
The San Diego company plans to combine its proprietary, 24-watt PXS-125 compact laser plasma X-ray source with the new Model 5J stepper in the third quarter of 2002. The integrated system will be used to demonstrate sub-130-nm lithography on 6-inch GaAs wafers as part of a contract with the U.S. Defense Advanced Research Projects Agency (Darpa).
Last year, JMAR announced it would integrate X-ray sources and stepper systems after the company acquired Semiconductor Advanced Lithography Inc. in Vermont (see Aug. 9 story). The JMAR/SAL NanoLithography division was formed in Vermont to complete development of the Model 5J stepper.
The JMAR Research (JRI) division in San Diego is now developing a higher-power 45-watt PXS-145 X-ray source for prototype delivery in early 2003. This system will replace the 25-watt source. A new integrated X-ray lithography system will then be capable of processing more than five 150-mm (6-inch) GaAs wafer levels per hour, said the company.
Eventually, JMAR expects to upgrade the NanoPulsar system for a throughput of 50 twelve-inch (300-mm) wafer-level exposures per hour.