COLORADO SPRINGS, Colo. -- Simtek Corp. here today announced development of next-generation low-voltage nonvolatile SRAMs for systems requiring high-speed random-access memory performance but 3-volt operation.
The first samples of 256-kilobit chips--organized 32-Kbit-by-8--are available, said the company. The "nvSRAMs" provide nonvolatile storage of data by connecting high-speed SRAM to Simtek's Quantum Trap elements. These elements protect the stored data under system software control or when the device automatically senses the loss of system power, according to the company.
"Delivering 3-volt 'nvSRAMs' marks a major milestone in the development of Simtek's core technology," said Don Carrigan, vice president of sales and marketing vice president at the Colorado Springs company. "We believe the opportunity for 3-volt products is four-to-five times the current 5-volt market and many systems designers are actively looking for high performance, reliable, low voltage solutions."
The Quantum Trap is a silicon-nitride nonvolatile storage technology that provides greater than 100 years of data retention and 1 million store operations, Simtek said. The nonvolatile storage element allows the memory circuits to operate at "true high-speed RAM system performance," the company said.
Production shipment of these 3-V products will begin in June. The series will be available in both dual in-line and surface-mount packages.