SUNNYVALE, Calif. -- Gearing up for third-generation (3G) wireless networks, Stanford Microdevices Inc. here today rolled out a radio-frequency (RF) device based on a high-speed silicon-germanium (SiGe) process technology.
The company announced the SRF-1016, an intermediate-frequency (IF) receiver/demodulator device designed for 2G/3G-based wireless infrastructure and fixed wireless applications.
Gary Gianatasio, vice president and general manager for mobile wireless infrastructure products at the company, said the new part provides a high-level of performance in terms of linearity, noise and ease of application.
Operating at frequencies from 40- to 300-MHz, the part provides 40-dB of gain control. Gain is controlled in 20-dB steps using standard CMOS logic levels.
It has a low amplitude and phase error demodulated inputs of less than 0.1-dB and 1 degree, respectively. The device is specified for use with a single 5-volt power supply.
The device comes in a 16-pin TSSOP plastic packages. Samples are now available, with production slated for mid-2001. Prices were not disclosed.