ICHON, South Korea -- Hyundai Electronics Industries Co. Ltd. today (March 26) announced a new series of low-power, 8-megabit SRAMs, which are being fabricated with 0.18-micron process technology inside the company's existing DRAM fabs.
The Korean chip maker said additional systems and process steps were added to the DRAM frontend lines to produce the SRAMs at low cost. The low-power SRAMs are being aimed at memory applications in next-generation mobile handset and wireless systems.
Hyundai said its SRAM sales reached more than $490 million in 2000--or about 7% or its semiconductor revenues--with most of the devices going to mobile phone applications. The 8-Mbit SRAMs operate with 1.8-, 2.5-, and 3.0-volt power supplies and, in standby mode, consume less than 10 microamperes, said the company. Pricing information was not released.