MUNICH -- During the Semicon Europa trade show here this week, Dow Chemical Co. announced development of the first low-k spin-on resin for dielectric interconnect processing on 300-mm wafers.
The new formulation of Dow Chemical's SiLK resin will enable chip makers to achieve a low-k constant of 2.6, said the Midland, Mich.-based company.
"Most production of 130-nm low-k dielectric applications will begin at 200-mm, but chip makers will quickly look to transfer low-k process technology to 300-mm wafer fabs," said Mark McClear, business director for Dow's Semiconductor Fab Materials group.
The first generation of 300-mm spin-on SiLK is aimed at 0.13-micron processing with both aluminum and dual-damascene copper interconnects. Dow said it is also offering a path to 0.10-micron (100-nm) technologies with a porous version of SiLK for a dielectric constant of 2.0.