SAN DIEGO--Peregrine Semiconductor Corp. here today announced a development and technology supply agreement with the U.S. Department of Defense for radiation hardened ICs based on submicron ultra-thin silicon-on-sapphire (SOS) processes.
The pact called for Peregrine to develop, implement, and demonstrate radiation-hardened SOS processes for the U.S. Defense Microelectronics Activity unit and the DMEA Flexible Foundry in Sacramento, Calif. The value of the contract is $4.8 million, said the San Diego company.
Peregrine's patented Ultra-Thin-Silicon (UTSi) CMOS process has been serving radio frequency (RF) chip applications in digital cellular phones, broadband wireless networks, and local multipoint distribution service networks (LMDS), infrastructure systems, and other communications markets.
Currently, Peregrine also supplies standard phase-locked loops (PLLs) and other communications components to rad-hard applications. In those cases, commercial-grade products are migrated to rad-hard specified parts to serve those applications. The company said it is also offering foundry design services to selected customers in space and defense applications.
"UTSi allows us to integrate advanced communications functions and complex digital on the same device, making it ideal for RF communications devices," said Stav Prodromou, president and chief executive officer of Peregrine.