MUNICH -- Infineon Technologies AG and Micron Technology Inc. today announced plans to co-develop a new series of reduced latency DRAMs for high-performance memory applications, such as switches, routers, and other high-bandwidth systems.
The memories, called RLDRAMs, will initially operate at data rates as high as 600 megabits per second per pin on devices, while reducing latency to a fraction of competing architectures, said the two chip makers. Infineon and Micron said the unique internal memory architecture of the RLDRAMs will allow "ultra-fast" random access, closing the speed gap that currently exists between DRAM and SRAM chips.
"Our agreement goes far beyond an arrangement to merely develop common specifications within a multi-generational roadmap," said Ernst Strasser, marketing director of graphics and specialty DRAM memory products at Infineon in Munich. "The RLDRAM co-development agreement includes activities providing customers with the assurance of functionally compatible, high-performance RLDRAM architectures from each company.
"Collectively representing the most advanced technologies and a large share of the DRAM market, the commitment of Infineon and Micron to RLDRAM assures users these functionallycompatible, high-performance memories will be widely available," he added.
Infineon and Micron in Boise, Idaho, plan to work together ensuring multiple sources for new RLDRAMs by developing pin- and function-compatible products.
"Micron is committing to this technology because it will drive the development of the memory products our customers need to design their future data networking systems," said Jerry Johnson, director of strategic marketing for networking products at the Boise company. "RLDRAM is the most cost effective means to achieve the high-bandwidth, low-latency memories required by future generations of high-speed data networks," he added.