HEILBRONN, Germany--Atmel Corp.'s RF-chip operation here and TriQuint Semiconductor Inc. in Hillsboro, Ore., today announced collaboration in development, production, and marketing of new ICs for Code Division Multiple Access (CDMA) handsets.
The two U.S.-based companies said they have already begun jointly developing a complete radio-frequency (RF) chip set, named CDMA345. The project joins silicon-germanium (SiGe) and gallium-arsenide (GaAs) technologies of the two companies to address CDMA cellular phone products.
A new power amplifier resulting from the development project was announced by TriQuint today. The device, called the TQ7135, is a 3-volt, two-stage SiGe heterojunction bipolar transistor (HBT) power amplifier for use in IS-95/98 and AMPS compliant mobile phones.
The overall CDMA345 development project aims to leverages complementary RF chip technologies, according to TriQuint and Atmel.
The combined experience in RF ICs will "enabled us to quickly develop innovative solutions that will provide significant performance and commercial advantages compared with the current product offerings available on the market today," said Matthias Bopp, director of marketing for Atmel's Wireless & Microcontrollers' Communication Division. "Later this year, a CDMA RF transmit solution will be available for volume production."
Under the project, TriQuint and Atmel engineers "jointly developed each circuit block," explained Dilek Barlas, director of technology and business development for TriQuint in Hillsboro. "The performance of these circuits and the speed with which they have been developed has demonstrated the value of this cooperation," he added.
TriQuint's TQ7135 SiGe power amplifier will be housed in a 4-mm2 leadless plastic package with 16 contacts. Pricing and detailed specification information will released in June.