BOISE, Idaho--Micron Technology Inc. here claimed it is sampling the industry's first 1.5-volt 32-megabit flash memory chip with read-while-write burst and page modes. The MT28F322D15FH is based on a dual-bank architecture and targeted at next-generation mobile phones.
The new 32-Mbit flash represents a major step forward in meeting needs of third-generation handset designs, according to Kevin Widmer, director of strategic marketing for Micron's Wireless Memory Products operation.
"These customers require very high throughput from the memory subsystem, while at the same time trying to minimize power consumption," he noted. "The digital baseband (DBB) chip sets used in 3G platforms are moving to operating voltages as low as 1.5V. Micron's new low-power, 32-Mbit device allows a direct interface between the DBB and the flash, achieving the minimum power consumption while operating at a burst frequency as high as 40 MHz."
The new flash chip supports various operating modes while operating with a power supply as low as 1.425 V, said the company. The nonvolatile memory is organized as a 2-Mbit-by-16 and fabricated with a 0.18-micron process technology.
Micron said the 32-Mbit flash has an asynchronous access time of 100 nanoseconds, a page access time of 30 ns and a 25-ns burst rate when operating in burst mode. The memory comes in a 58-ball FBGA package with 0.75-mm pitch between contacts. A one-time programmable (OTP) area of memory is available for security codes.
In quantities of 1,000, the new 32-Mbit flash is priced at $12.95 each.