ERFURT, Germany -- X-FAB Semiconductor Foundries AG here today announced a partnership with France's Silicon-On-Insulator Technologies (SOITEC) to develop volume production capability for SOI-based mixed-signal integrated cricuits.
Under the partnership, SOITEC in Bernin, France, will provide SOI wafers using its Unibond technology for X-Fab's new 1-micron mixed-signal process for fabrication of devices on silicon-on-insulator substrates. These SOI-based devices are expected to serve automotive, industrial, and other high-voltage, high-temperature applications, said the two companies.
The partnership is aimed at guaranteeing foundry customers with stable volume supplies of SOI wafers in addition to the new mixed-signal process, said Hans-Juergen Straub, chief executive officer of X-Fab.
X-Fab's new process is based on a dielectric isolated twin-well architecture and containing both single poly and three-metal layers. The use of SOI wafers is expected to help increase performance and lower power dissipation in high-voltage and high-temperature IC designs.
To support growing demand for SOI wafers, SOITEC is now building a second manufacturing facility in Bernin as well as filling out its initial plant. The company expects to complete construction of its second SOI wafer factory next summer, eventually giving it additional capacity to produce up to 1.2 million eight-inch (200-mm) equivalent substrates per year (see July 6 story).