MUNICH -- Infineon Technologies AG today announced samples of a low-power 128-megabit DRAM for mobile system applications, housed in a new industry-standard memory package, called a fine-pitch ball-grid array (FBGA).
Compared to existing thin small-outline packages (TSOPs), the new FBGA reduces board space requirements by a factor of three, occupying 8-mm-by-9-mm of area, said the Munich chip maker.
Infineon said its new Mobile-RAM reduces power consumption by up to 80%, compared to standard 128-Mbit SDRAMs, depending upon the operating conditions and system design. The memory runs on a reduced operating voltage of 2.5 volts and an I/O voltage of 1.8 to 2.5 V. It also uses special power management features.
"The Mobile-RAM represents a quantum leap in efforts to maximize battery lifetime and minimize size, weight and total system cost of the next generation of personal digital assistants, smart phones and digital still cameras," said Axel Hahn, senior director of product marketing at Infineon's Memory Product Division.
According to market projection by Devices of International Data Corp., unit shipments of PDAs and other handheld devices are expected to grow from 19.6 million systems in 2001 to 70.8 million in 2005. IDC said this market will grow at an annual rate of 39% per year.
Infineon said its product roadmap for Mobile-RAM includes 128-Mbit parts in by-8-bit and by-16-bit configurations as well as the launch of 256-Mbit memories in 2002.
Samples of the 128-Mbit Mobile-RAM (organized 8-Mbit-by-16 and 16-Mbits-by-8) are now available at a price of $15 each in small quantities, said Infineon. Volume production of these memories will begin later this year.