SEOUL -- Samsung Electronics Co. Ltd. today claimed development of the industry's first 576-megabit Rambus DRAM. The new memory is based on 0.12-micron processes and operates at 1.066-GHz frequencies, making it about eight times faster than today's PC133 synchronous DRAMs, said the Korean chip maker.
Samsung said the high-performance 576-Mbit RDRAM will be targeted at high-end PCs, workstations and servers. It is also expected to find its way into applications for digital video and high-performance graphics systems.
The new 0.12-micron design rules have greatly removed the cost penalties associated with the RDRAM architecture, according to Samsung. The larger die size required for Rambus Inc.'s memory design has been shrunk to less than 1% more than competing SDRAM-based memories, the company claimed.
Samsung said it can apply the same 0.12-micron process technology to existing 128- and 256-Mbit RDRAMs to increase the number of products produced on a wafer by 47%.
The South Korean company said it plans to begin mass production of the 576-Mbit Rambus DRAMs in the second quarter of 2002.