TOKYO--Hitachi Ltd. and RF Micro Devices Inc. today announced a cross-supply agreement for gallium-arsenide (GaAs) heterojunction bipolar transistors (HBTs) and modules, including cooperation in design and manufacturing of products.
RF Micro Devices of Greensboro, N.C., has already begun supplying GaAs HBT power amplifier chips to Hitachi under the agreement. Hitachi plans to provide module design and assembly services for RF Micro Devices, and both companies will market the products separately, under the new agreement.
"We expect this collaboration will increase capacity utilization in our fabs, reduce costs and improve our overall competitiveness," said Jerry Neal, executive vice president of sales, marketing and strategic development of RF Micro Devices. "We're eager to tap into Hitachi's module design and assembly capabilities while providing them immediate fab capacity."
Neal said RF Micro Devices has received initial production orders from Hitachi for GaAs HBT JCDMA power amplifier die. The amplifier chips were designed for a module developed by Hitachi for the Japanese market, he said. "We expect shipments to commence in this quarter, with volumes forecast to ramp into calendar year 2002," Neal added.
Terms of the agreement were not released.
"Working together, RFMD and Hitachi will maximize our abilities to remain at the forefront of the rapidly advancing technologies needed to meet future customer demands," said Kunio Kobayashi, director of Hitachi Semiconductor's Micro Module Business Unit.