SEOUL --Samsung Electronics Co. Ltd. said it has used a 0.15-micron process technology to offer the industry's first 256-megabit NAND flash memories that operate on 0.18 volt and feature 16-bit input/output (I/O) pins. The new flash chip is also available with 8-bit I/O.
The NAND-based flash is housed in a 9-mm-by-11-mm-by-0.8-mm package. Samsung said the new 256-Mbit flash can reduce the power consumption of nonvolatile memory systems by more than 30% compared to conventional flash devices.
Samsung said it plans to offer an engineering kit with reference design hardware and software--NAND flash driver and dedicated file system for NAND flash memory.The kit is aimed at helping to accelerate product development at companies that have been primarily using NOR-based flash.
The Korean memory maker said it is also expanding the availability of 1.8-V and 16-bit I/O features to 128-Mbit and 1-gigabit flash devices for mobile telephones. The wider I/O bandwidth and low-power operation will be needed in next-generation 2.5G and 3G phones, which will be capable of receiving video on demand and enhanced services. The 256-Mbit flash is being offered as a stand-alone device or in multi-chip packages with random access memories.