LAS VEGAS -- Toshiba Corp. and SanDisk Corp. today claimed to be the first chip suppliers to introduce a 1-gigabit NAND-based flash memory. The nonvolatile memory is based on SanDisk's patented multi-level cell technology and will be fabricated by Toshiba using a 0.16-micron process technology, said the two companies here, during the Comdex trade show.
The new 1-Gbit flash device will be manufactured on the same 0.16-micron process that is currently being used by Toshiba to produce 512-megabit NAND chips. SanDisk's multi-level cell design allows two bits of data to be stored in a single memory cell.
Sunnyvale, Calif.-based SanDisk said new design concepts and operational algorithms greatly increase multi-level cell write speeds, enabling the new 1-Gbit chip to deliver essentially the same performance as standard NAND flash memories.
Toshiba said it will fabricate the 1Gbit flash for both companies at its facility in Yokkaichi, Japan, and at the Dominion Semiconductor plant in Manassas, Va. Toshiba and SanDisk have formed a joint venture, called FlashVision, at the Virginia facility to share costs in memory production (see June 6 story).