SEOUL -- Samsung Electronics Co. Ltd. today disclosed plans to begin mass production of 0.13-micron integrated circuits early in 2002 using a newly developed technology platform that gives the Korean chip maker three options for different kinds of IC products.
A 0.13-micron process with copper interconnects has been readied for high-performance, low-power consuming system-on-chip (SoC) products and microprocessors early next year. The Korean company said it has also developed an aluminum interconnect version of the 0.13-micron technology for "variable applications" in SoC designs. Samsung said it believes it will be able to produce world's smallest SRAM cells with this technology for low cost SoC devices.
A generic 0.13-micron process will be applied to most SoC designs, while a high-speed version of the technology will be used for central processing units and network devices, according to Samsung. A low-power consumption 0.13-micron process has also been developed for mobile applications, such as wireless handsets and personal digital assistants (PDAs). Samsung said it completed development on the 0.13-micron technology in November.
Samsung said it will begin applying the 0.13-micron process to mass production of high-performance microprocessors and 20 or more next-generation SoC devices in early 2002. The company also predicted that $1 billion of its revenues in 2005 will come from products fabricated with the 0.13-micron processes.