SUNNYVALE, Calif. -- MoSys Inc. here said today that NEC Corp. has licensed its 1T-SRAM technology for use by NEC's 1st LSI Memory Division in high-density application-specific memories.
One application the Tokyo-based NEC is eyeing is Nintendo Corp.'s next-generation game console. Details of the product will be announced at a later time.
"NEC evaluated and licensed MoSys' 1T-SRAM memory technology based on its combination of performance, density and power capabilities not available from other technologies," said Kazu Tokushige, chief manager at NEC's 1st LSI Memory Division.
MoSys first licensed the patented technology to NEC last year. Since then, the two companies have been cooperating to port and silicon-validate MoSys' 1T-SRAM technology on NEC's advanced fabrication processes in a variety of configurations.
"We are pleased that NEC will extend the use of our 1T-SRAM memory technology to stand-alone high-density application-specific memory devices," said Mark-Eric Jones, vice president and general manager for intellectual property at MoSys. "This builds on the existing relationship offering embedded 1T-SRAM technology to NEC's ASIC customers."
Offered in densities up to 128 megabits, MoSys' 1T-SRAM technology uses a single transistor cell to achieve its high density while maintaining the refresh-free interface and low-latency random memory-access cycle time associated with traditional six-transistor SRAM cells.
Embedded 1T-SRAM allows designers to get beyond the density limits of six-transistor SRAMs, and also reduces much of the circuit complexity and extra cost associated with using embedded DRAM, according to MoSys. 1T-SRAM memories can be fabricated in either pure logic or embedded memory processes using as little as one-ninth of the area of traditional six-transistor SRAM cores.