GREENSBORO, N.C. -- RF Micro Devices Inc. here announced today that its new RF2172 -- a 3.6-volt, 250-milliwatt amplifier -- has been engineered for use as the final RF amplifier in frequency hopping/direct sequence spread-spectrum cordless phones or other applications in the 902- to 928-MHz ISM band.
Manufactured with an advanced GaAs HBT (gallium arsenide heterojunction bipolar transistor) process, the RF2172 is a medium-power, high-efficiency amplifier IC targeting hand-held systems, including 3.6-V spread-spectrum cordless phones and portable battery-powered equipment.
The device has been designed with 0- to 28-dB variable gain with analog control to optimize transmit power, while maximizing battery life in portable equipment that requires up to 100-mW transmit power at the transmit port. In addition, the RF2172 features 24-dBm typical output power, 58% efficiency at maximum output and an on-board power-down mode.
Packaged in a compact 4-mm-x-4-mm leaded chip carrier, the RF2172 is available immediately for $1.27 per unit in quantities of 10,000.