PHOENIX -- Motorola Inc. here today announced it has completed an expansion of its gallium-arsenide (GaAs) wafer fab, converting the plant from four-inch to six-inch substrates three months ahead of schedule. Motorola now claims that the plant is the world's largest GaAs fab producing radio-frequency (RF) devices.
The expansion triples Motorola's GaAs output at the CS-1 facility. Motorola said the plant is one of the first in the industry to complete a 6-inch wafer conversion for all GaAs process technologies. The frontend facility can process implanted MESFETs (metal semiconductor field effect transistors); pHEMTs (high electron mobility transistors); and HBTs (heterojunction bipolar transistors).
The plant makes RF power amplifiers, solid-state antenna switches, and low-noise amplifiers for cellular phones. It also produces mixer/exciter and power amplifiers for cell phones, base stations, two-way radios and wireless systems using the IMS (industrial, scientific, and medical) band.
Motorola did not release figures on how many wafer starts were possible in a month at the expanded GaAs facility.