BILTHOVEN, The Netherlands -- ASM International N.V. here today said its U.S. subsidiary has shipped the first wafers with high-k dielectric film grown from atomic layer chemical vapor deposition (ALCVD) to International Sematech as part of a development project for advanced CMOS transistor gate structures.
Sematech, based in Austin, is working with ASM and the IMEC research center in Belgium to access the capabilities of ALCVD in creating new gate-stack structures for future technology nodes (see July 31 story).
The Sematech project complements other programs defined by ASM and IMEC in Leuven, Belgium, said Chris Werkhoven, vice president of strategic marketing at ASM America in Phoenix. The programs are using separate but similar Polygon cluster tools with ALCVD. "Overall, we now have a worldwide coordinated effort that will demonstrate the unique capabilities of ALCVD," said Werkhoven
ASM acquired its ALCVD technology when it bought Microchemistry Ltd. last year (see Sept. 1, 1999, story). The Dutch company believes ALCVD will become a key process for thin-film deposition because of its ability to handle feature sizes below 0.07 micron and wafer diameters up to 300 mm. This capability allows for the use of high-k materials for gate and DRAM dielectrics, as well as barrier layers in copper processes, according to the company.